PART |
Description |
Maker |
WEDPNF8M721V-XBX WEDPNF8M721V-1010BC WEDPNF8M721V- |
8Mx72 Synchronous DRAM 8Mb Flash Mixed Module Multi-Chip Package 8Mx72同步DRAM 8MB闪存的混合模块多芯片封装
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
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TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM) 8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM) 4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM)的 8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM) SYNCHRONOUS DRAM, PDSO54
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Toshiba Corporation Toshiba, Corp.
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TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM) 4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM)的 16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM)的
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Toshiba Corporation Toshiba, Corp.
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HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
HYS72V8200GR-8-E HYS72V16200GR-8-E HYS72V16201GR-8 |
16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 内存| 32MX72 |CMOS |内存| 168线|塑料 SDRAM|16MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM|8MX72|CMOS|DIMM|168PIN|PLASTIC
|
INFINEON TECHNOLOGIES AG
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H57V1262GTR-50X H57V1262GTR-60X H57V1262GTR-70X H5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
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HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
KMM5328004CSW |
8MB X 32 DRAM Simm Using 4MB X 16
|
Samsung Semiconductor
|
HY57V641620ET-7 HY57V641620ESTP-H HY57V641620ET-H |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
M52S16161A-10TG M52S16161A-8BG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50 512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
|
Elite Semiconductor Memory Technology, Inc.
|
KM48S8030CT-FL KM48S8030CT-GFH KM48S8030CT-GF7 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 143MHz 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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Samsung Electronic Electronic Theatre Controls, Inc.
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M12L16161A-5TIG M12L16161A-7BIG M12L16161A-7TIG M1 |
1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
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